Semiconductor substrate structures and semiconductor devices
A semiconductor substrate structure includes a semiconductor substrate having a first conductivity type; a first buried well region disposed in the semiconductor substrate, having a second conductivity type opposite to the first conductivity type; and a first buried layer and a second buried layer d...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
16.04.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor substrate structure includes a semiconductor substrate having a first conductivity type; a first buried well region disposed in the semiconductor substrate, having a second conductivity type opposite to the first conductivity type; and a first buried layer and a second buried layer disposed in the semiconductor substrate and on the first buried well region, wherein the first buried layer has the second conductivity type, the second buried layer has the first conductivity type, and the first layer has a first portion and a second portion, the second buried layer is located between the first portion and the second portion. |
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Bibliography: | Application Number: TW20176132415 |