Operating method of resistive memory storage apparatus

A operating method of a resistive memory storage apparatus includes applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to an amount rela...

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Bibliographic Details
Main Authors CHENG, JUIEH, LIN, LIH-WEI, TSENG, I-HSIEN, TSAI, TSUNG-HUAN
Format Patent
LanguageChinese
English
Published 16.04.2019
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A operating method of a resistive memory storage apparatus includes applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to an amount relationship of the cell current and a reference current. The memory cell that the forming voltage is applied operates in a heavy forming and serves as an one-time programmable memory device.
Bibliography:Application Number: TW20170134810