Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute...

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Main Authors SUAREZ, FERRRAN, MAROS, AYMERIC, HERNANDEZ, IVAN, SIALA, SABEUR, ROUCKA, RADEK, LANG, JORDAN, SUKIASYAN, ARSEN, LIU, TING
Format Patent
LanguageChinese
English
Published 16.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.
Bibliography:Application Number: TW20187123242