Semiconductor device and method for manufacturing the same

Embodiments of the present disclosure provide a method of cleaning a lanthanum containing substrate without formation of undesired lanthanum compounds during processing. In one embodiment, the cleaning method includes treating the lanthanum containing substrate with an acidic solution prior to clean...

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Bibliographic Details
Main Authors YEH, MING-HSI, HUANG, MINGI, CHUANG, YING-LIANG, HUANG, KUO-BIN
Format Patent
LanguageChinese
English
Published 01.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the present disclosure provide a method of cleaning a lanthanum containing substrate without formation of undesired lanthanum compounds during processing. In one embodiment, the cleaning method includes treating the lanthanum containing substrate with an acidic solution prior to cleaning the lanthanum containing substrate with a HF solution. The cleaning method permits using lanthanum doped high-k dielectric layer to modulate effective work function of the gate stack, thus, improving device performance.
Bibliography:Application Number: TW20187121880