GaAs substrate and production method therefor

A GaAs substrate having a first surface. The number of particles, per cm2 of the first surface, present on the first surface and having a long diameter of at least 0.16 [mu]m and the number of damages, per cm2 of a second surface formed by etching the first surface 0.5 [mu]m in the depth direction,...

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Bibliographic Details
Main Authors HIGUCHI, YASUAKI, FUJIWARA, SHINYA
Format Patent
LanguageChinese
English
Published 01.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A GaAs substrate having a first surface. The number of particles, per cm2 of the first surface, present on the first surface and having a long diameter of at least 0.16 [mu]m and the number of damages, per cm2 of a second surface formed by etching the first surface 0.5 [mu]m in the depth direction, present on the second surface and having a long diameter of at least 0.16 [mu]m total no more than 2.1.
Bibliography:Application Number: TW20187106106