Ultraviolet light emitting diode with tunnel junction

A light emitting diode (LED) to emit ultraviolet (UV) light includes a first n-type semiconductor region and a first p-type semiconductor region. The LED also includes an active region disposed between the first n-type semiconductor region and the first p-type semiconductor region, and in response t...

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Bibliographic Details
Main Authors SCHUBERT, MARTIN F, GRUNDMANN, MICHAEL
Format Patent
LanguageChinese
English
Published 16.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode (LED) to emit ultraviolet (UV) light includes a first n-type semiconductor region and a first p-type semiconductor region. The LED also includes an active region disposed between the first n-type semiconductor region and the first p-type semiconductor region, and in response to a bias applied across the light emitting diode, the active region emits UV light. A tunnel junction is disposed in the LED so the first p-type semiconductor region is disposed between the active region and the tunnel junction. The tunnel junction is electrically coupled to inject charge carriers into the active region through the first p-type semiconductor region. A second n-type semiconductor region is also disposed in the LED so the tunnel junction is disposed between the second n-type semiconductor region and the first p-type semiconductor region.
Bibliography:Application Number: TW20187112500