Semiconductor nanosized material
The present invention relates to a method for synthesizing a semiconductor material.
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for synthesizing a semiconductor material. |
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Bibliography: | Application Number: TW20180104601 |