Vapor phase film deposition apparatus

• Main Authors: LIN, PO-JUNG, JUNJI, KOMENO, NOBORU, SUDA, OISHI, TAKAHIRO
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2018
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In an embodiment, a vapor phase film-forming apparatus 10 includes a susceptor 12 for holding a film forming substrate 14. A flow channel 40 is formed horizontally by the opposite surface 20 facing the susceptor 12. In the flow channel 40, a material gas introduction port 42 and material gas and a purge gas exhaust port 48 are provided. On the opposite surface 20, many purge gas nozzles 36 are provided and divided into a plurality of purge areas PE1-PE 3. Mass flow controllers (MFCs) 52A-52C and 62A-62C for adjusting the flow rate for each purge area are provided in each purge area. Then, the mass flow rate of the purge gas is controlled by the MFCs 52A-52C and 62A-62C for each purge area.