Dry etching agent, dry etching method and method for producing semiconductor device

• Main Authors: KASHIWABA, TAKASHI, OOMORI, HIROYUKI, YAO, AKIFUMI
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The purpose of the present invention is to provide: a dry etching agent which places little burden on the global environment, and which is capable of performing an anisotropic etching without using a special apparatus, while enabling the achievement of a good etched shape; and a dry etching method which uses this dry etching agent. A dry etching agent according to the present invention contains at least a hydrofluoroalkylene oxide which is represented by chemical formula CF3-CxHyFzO (wherein x is 2 or 3, y is 1, 2, 3, 4 or 5 and z=2x-1-y) and has a three-membered ring structure containing an oxygen atom. In a dry etching method according to the present invention, at least one silicon material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide is selectively etched with use of a plasma gas that is obtained by exciting the dry etching agent into a plasma.