Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a columnar member, and an insulating film. The stacked body is provided on the substrate, and includes a plurality of electrode layers separately stacked each other. The columnar member is provided in th...
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Main Author | |
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Format | Patent |
Language | Chinese English |
Published |
16.07.2018
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Subjects | |
Online Access | Get full text |
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Summary: | According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a columnar member, and an insulating film. The stacked body is provided on the substrate, and includes a plurality of electrode layers separately stacked each other. The columnar member is provided in the stacked body, and includes a first semiconductor portion extending in a stacked direction of the plurality of electrode layers. The insulating film covers a bottom portion of the columnar member. |
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Bibliography: | Application Number: TW20176104752 |