Semiconductor structure and method thereof
The present disclosure provides a semiconductor structure and a method making the same. The semiconductor structure includes a fin structure on a substrate; a first gate stack and a second gate stack formed on the fin structure; a dielectric material layer disposed on the first and second gate stack...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
01.07.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure provides a semiconductor structure and a method making the same. The semiconductor structure includes a fin structure on a substrate; a first gate stack and a second gate stack formed on the fin structure; a dielectric material layer disposed on the first and second gate stacks, wherein the dielectric layer includes a first portion disposed on a sidewall of the first gate stack with a first thickness and a second portion disposed on a sidewall of the second gate stack with a second thickness greater than the first thickness; a first gate spacer disposed on the first portion of the dielectric material layer; and a second gate spacer disposed on the second portion of the dielectric material layer. |
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Bibliography: | Application Number: TW20176118724 |