Method for selective nitride etch

A representative method for selective radical-component etching of exposed nitride-containing material comprises the steps of: disposing a substrate in an etch processing region; producing a plasma in a plasma region; flowing a radical component of the plasma into the etch processing region while su...

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Bibliographic Details
Main Authors CHIU, YI-WEI, WENG, TZUAN, WU, MENGUAN
Format Patent
LanguageChinese
English
Published 01.06.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A representative method for selective radical-component etching of exposed nitride-containing material comprises the steps of: disposing a substrate in an etch processing region; producing a plasma in a plasma region; flowing a radical component of the plasma into the etch processing region while substantially excluding charged ions of the plasma from entering the etch processing region; flowing an unexcited gas into the etch processing region; and etching an exposed nitride-containing material with reaction products of the radical component of the plasma and the unexcited gas.
Bibliography:Application Number: TW20176116012