Method for forming a thin film assembly

Methods for forming a thin film assembly are provided. The methods include forming a first material layer over a wafer. The first material layer is a transparent thin film. A second material layer is formed over the first material layer. An opening is formed in the second material layer and exposes...

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Bibliographic Details
Main Authors LIN, YUN-YUE, LIN, CHIHNG, LEE, HSINANG, WANG, HSUAN-I, CHEN, HSUANN
Format Patent
LanguageChinese
English
Published 16.04.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for forming a thin film assembly are provided. The methods include forming a first material layer over a wafer. The first material layer is a transparent thin film. A second material layer is formed over the first material layer. An opening is formed in the second material layer and exposes a center portion of the first material layer. A trench is formed in the second material layer and surrounds the opening. A protection layer is formed over the second material layer and fills the opening to cover the center portion of the first material layer. A laser process is performed along the trench so that the trench extends to penetrate the first and second material layers. As a result, the first and second material layers outside of the trench are removed. After performing the laser process, the protection layer and the wafer are removed. As a result, a thin film assembly is formed.
Bibliography:Application Number: TW20160131239