PUF value generation using an anti-fuse memory array

• Main Authors: GAVRILOV, ROMAN, GRIGORIEV, GRIGORI, IVANOV, OLEG
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2017
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A method and circuit are used to provision and reliably reproduce random value for Physical Unclonable Function (PUF) for use in cryptographic applications. A circuit in PUF value generation apparatus comprises two dielectric breakdown based anti-fuses and a current limiting circuit connected between anti-fuses and power rails. Two anti-fuses are connected in parallel for value generation in programming cycle by applying high voltage to both anti-fuses at the same time. Dielectric breakdown der high voltage stress is known to be a process of random nature which causes time to breakdown to be unique for each anti-fuse cell. Unique and random time to breakdown causes one cell to break before another causing high breakdown current through broken cell. Once high breakdown current through one broken cell is established, a voltage drop across a current limiting circuit leads to decreased voltage across both cells. Due to the steep voltage dependence of breakdown time the decreased voltage drastically slows down the