Semiconductor device and method of manufacturing the same

A performance of a semiconductor device including an RC-IGBT is improved. An AlNiSi layer (a layer containing aluminum (Al), nickel (Ni), and silicon (Si)) is formed between a back surface of a semiconductor substrate and a back surface electrode. Thus, a favorable ohmic junction can be obtained bet...

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Bibliographic Details
Main Authors FUJII, YUJI, NAKANISHI, SHO
Format Patent
LanguageChinese
English
Published 01.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A performance of a semiconductor device including an RC-IGBT is improved. An AlNiSi layer (a layer containing aluminum (Al), nickel (Ni), and silicon (Si)) is formed between a back surface of a semiconductor substrate and a back surface electrode. Thus, a favorable ohmic junction can be obtained between the back surface electrode and an N+-type layer constituting a cathode region in an embedded diode, and a favorable ohmic junction can be obtained between the back surface electrode and a P-type layer constituting a collector region in an IGBT. The AlNiSi layer contains 10 at % or more of each of the aluminum (Al), the nickel (Ni), and the silicon (Si).
Bibliography:Application Number: TW20160131535