Diode laser for wafer heating for EPI processes

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and o...

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Main Authors HILKENE, MARTIN A, GAJENDRA, PALAMURALI, BAUTISTA, KEVIN JOSEPH, CHU, SCHUBERT S, SANCHEZ, ERROL ANTONIO C, HOLMGREN, DOUGLAS E, COLLINS, RICHARD O, SHAH, KARTIK, MYO, NYI O, RAO, PREETHAM, YE, ZHI-YUAN
Format Patent
LanguageChinese
English
Published 01.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
Bibliography:Application Number: TW20165132553