Integrated circuit

An integrated circuit (IC) using high-[kappa] metal gate (HKMG) technology with an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory cell is provided. A logic device is arranged on a semiconductor substrate and comprises a logic gate. A memory cell is arranged on the semiconductor substrate...

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Bibliographic Details
Main Authors WU, WEING, CHEN, IING
Format Patent
LanguageChinese
English
Published 01.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit (IC) using high-[kappa] metal gate (HKMG) technology with an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory cell is provided. A logic device is arranged on a semiconductor substrate and comprises a logic gate. A memory cell is arranged on the semiconductor substrate and comprises a control transistor and a select transistor laterally adjacent to one another. The control and select transistors respectively comprise a control gate and a select gate, and the control transistor further comprises a charge trapping layer underlying the control gate. The logic gate and one or both of the control and select gates are metal and arranged within respective high [kappa] dielectric layers. A high-[kappa]-last method for manufacturing the IC is also provided.
Bibliography:Application Number: TW20165141158