A non-volatile semiconductor memory device and a method for controlling the same

A non-volatile semiconductor memory device has a NAND string, in which multiple memory cells are connected in series. A read procedure is performed for a selected memory cell in the NAND string on the condition that the selected memory cell is applied with a selected voltage while non-selected memor...

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Bibliographic Details
Main Author HOSONO, KOJI
Format Patent
LanguageChinese
English
Published 16.06.2017
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Summary:A non-volatile semiconductor memory device has a NAND string, in which multiple memory cells are connected in series. A read procedure is performed for a selected memory cell in the NAND string on the condition that the selected memory cell is applied with a selected voltage while non-selected memory cells are driven to be turned on without regard to cell data thereof. In the read procedure, a first read pass voltage is applied to non-selected memory cells except an adjacent and non-selected memory cell disposed adjacent to the selected memory cell, the adjacent and non-selected memory cell being completed in data write later than the selected memory cell, and a second read pass voltage higher than the first read pass voltage is applied to the adjacent and non-selected memory cell.
Bibliography:Application Number: TW20165138000