Thermal chemical vapor deposition system and operating method thereof

• Main Authors: LIN, SHIAN-HUEI, WU, CHENG-TSUNG, LEU, PO-HSIUNG, HSU, JUI-FU, HSIEH, JHENG-UEI, LIAO, SI-WEN, LO, YENAN, LAI, YI-FANG, LIU, DING-I, HSU, KAI-SHIUNG
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A thermal chemical vapor deposition (CVD) system includes a lower chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the lower chamber, in which the upper chamber and the lower chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the lower chamber from the heat.