Polyurethane CMP pads having a high modulus ratio

A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio o...

Full description

Saved in:
Bibliographic Details
Main Authors MA, RACHEL RUI-QIU, SPEER, NATHAN, TSAI, CHENIH, BERGMAN, KATHRYN, FU, LIN
Format Patent
LanguageChinese
English
Published 16.05.2017
Subjects
AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GENERAL PROCESSES OF COMPOUNDING
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
WORKING-UP
Online AccessGet full text

Cover

More Information
Summary:A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C to storage modulus at 80 degrees C of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C of 1200 MPa or more, and/or a storage modulus at 80 degrees C of 15 MPa or less.
Bibliography:Application Number: TW20165131001