CMP slurry composition for organic film, preparation method thereof and polishing method using the same

Disclosed herein are a CMP slurry composition for organic films, a preparation method thereof and a polishing method using the same. The CMP slurry composition includes an oxidant and a solvent, wherein the CMP slurry composition has a variation in water contact angle ([Delta][theta]w) of 5 DEG to 9...

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Bibliographic Details
Main Authors DO, KEUN-BONG, YOO, YONG-SIK, JUNG, YOUNGUL, KIM, DONG-JIN, CHOI, JUNG-MIN
Format Patent
LanguageChinese
English
Published 01.05.2017
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
TRANSPORTING
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Summary:Disclosed herein are a CMP slurry composition for organic films, a preparation method thereof and a polishing method using the same. The CMP slurry composition includes an oxidant and a solvent, wherein the CMP slurry composition has a variation in water contact angle ([Delta][theta]w) of 5 DEG to 90 DEG, as calculated by Equation 1. [Equation 1] Water contact angle variation ([Delta][theta]W) =|[theta]-[theta]2|---(1).
Bibliography:Application Number: TW20160126301