Method and structure to make fins with different fin heights and no topography

A semiconductor structure is provided that contains silicon fins having different heights, while maintaining a reasonable fin height to width ratio for process feasibility. The semiconductor structure includes a first silicon fin of a first height that is located on a first buried oxide structure. T...

Full description

Saved in:
Bibliographic Details
Main Authors DE SOUZA, JOEL P, KHAKIFIROOZ, ALI, CHENG, KANGGUO, SCHEPIS, DOMINIC J, REZNICEK, ALEXANDER
Format Patent
LanguageChinese
English
Published 01.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor structure is provided that contains silicon fins having different heights, while maintaining a reasonable fin height to width ratio for process feasibility. The semiconductor structure includes a first silicon fin of a first height that is located on a first buried oxide structure. The structure further includes a second silicon fin of a second height that is located on a second buried oxide structure that is spaced apart from the first buried oxide structure. The second height of the second silicon fin is greater than the first height of the first silicon fin, yet a topmost surface of the first silicon fin is coplanar of a topmost surface with the second silicon fin.
Bibliography:Application Number: TW20165113709