Oxide sintered compact, oxide sputtering target, and oxide thin film

• Main Authors: NARA, ATSUSHI, SEKI, HIDETO
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2017
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CABLES; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

This sintered compact is characterized by containing zinc (Zn), gallium (Ga), silicon (Si), and oxygen (O), wherein the Zn content expressed as ZnO is 5-60 mol%, the Ga content expressed as Ga2O3 is 8.5-90 mol%, the Si content expressed as SiO2 is 0-45 mol%, a condition A ≤ (B+2C) is satisfied when the Zn content expressed as ZnO is represented as A (mol%), the Ga content expressed as Ga2O3 is represented as B (mol%), and the Si content expressed as SiO2 is represented as C (mol%), and the sintered compact has a relative density of 90% or higher. The present invention addresses the problem of efficiently obtaining an amorphous film having high transmissivity and a low refractive index, without introducing oxygen into the atmosphere during deposition by DC sputtering.