Silicon wafer and method for manufacturing same

• Main Authors: NAKAMURA, KOUZOU, KUDO, SATOSHI, MURANAKA, TOSHIYUKI, MATSUDA, SHUHEI, HIRAKI, KEIICHIRO, KIM, TEGI
• Format: Patent
• Language: Chinese; English
• Published: 16.12.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A manufacturing method of the present invention includes: a step for slicing a silicon single crystal containing boron as an acceptor, and obtaining a silicon wafer to be heat treated; and a step for obtaining boron concentration with respect to the silicon wafer to be heat treated. On the basis of a step for obtaining oxygen donor concentration with respect to the silicon wafer to be heat treated, and on the boron concentration obtained by means of the step for obtaining the boron concentration, and the oxygen donor concentration obtained by means of the step for obtaining the oxygen donor concentration, whether the silicon wafer is to be subjected to heat treatment at a temperature of 300 DEG C or higher is determined. Consequently, the wafer with reduced unevenly distributed LPD on the wafer is obtained.