Sputtering target for forming transparent film for solar cells, and process for production thereof

• Main Authors: YAMAGUCHI, GOU, ZHANG, SHOU-BIN, KONDOU, YUICHI
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2016
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TREATMENT OF NATURAL STONE

Provided are: a sputtering target for forming a transparent film for solar cells, which can achieve the DC sputtering of a ZnO-SiO2-Al2O3 film that has a lower refractive index than that of an AZO film; and a process for producing the sputtering target. The sputtering target comprises a sintered oxide material having a component composition comprising 0.3-4.0 wt% of Al, 6.0-14.5 wt% of Si and a remainder made up by Zn and unavoidable impurities in which all of the amounts are expressed relative to the total amount of all of the metal components, wherein composite oxides Zn2SiO4 and ZnO are contained in the structure of the sintered material. The process for producing the sputtering target comprises: a step of mixing an Al2O3 powder, an SiO2 powder and a ZnO powder together at such a proportion that Al2O3 is contained in an amount of 0.5-5.0 wt%, SiO2 is contained in an amount of 10-22 wt% and the remainder is made up by ZnO and unavoidable impurities, thereby producing a mixed power; and a step of sintering t