Indium phosphorus substrate, indium phosphorus substrate inspection method, and indium phosphorus substrate manufacturing method

• Main Authors: HIGUCHI, YASUAKI, FUJIWARA, SHINYA
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; PERFORMING OPERATIONS; POLISHING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided are: an indium phosphorus substrate which is capable of making uniformity of an epitaxial film to be grown on the substrate excellent, and improving PL characteristics and electrical characteristics of an epitaxial wafer wherein the epitaxial film is used; a method for inspecting the indium phosphorus substrate; and a method for manufacturing the indium phosphorus substrate. The indium phosphorus substrate includes a first main surface and a second main surface, and an average value m1 of a surface roughness Ra1 at the center of the first main surface of the indium phosphorus substrate, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four areas disposed at equal intervals along an outer end portion of the first main surface, said areas being on the 5 mm inner side from the outer end portion, is equal to or less than 0.5 nm, and the standard deviation [sigma]1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is equal to or less than 0.2 nm.