Apparatus and method for thermally treating substrates

• Main Authors: LANGNER, JOST-MARTIN, LUENENBUERGER, MARKUS, THERES, ARNE
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COLORIMETRY; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; METALLURGY; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; RADIATION PYROMETRY; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to an apparatus and a method for treating one or more substrates (2), comprising a process chamber (3) and a susceptor (1) which can be heated by a heating device (4) which comprises a plurality of zone heating devices (4'), wherein a first zone heating device (4') heats a first zone (A) of the susceptor (1) and a second zone heating device (4') heats a second zone (B) of the susceptor (1), wherein a control device (5) is associated with each zone (A, B), the control variable of said control device being a temperature measured with at least one temperature measuring device (6) on the first side (1') of each zone (A, B), which temperature is regulated to a target value by controlling the heating power fed into the associated zone heating device (4'). It is proposed that the control variable of the second zone (B) is a temperature of the free surface of the substrate (2) and, in addition, a temperature of the free surface of the first side (1') of the susceptor (1) is measured in the secon