Selective nitride etch
Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the pla...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.10.2016
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Abstract | Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride. |
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AbstractList | Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride. |
Author | THEDJOISWORO, BAYU ATMAJA ANGELOV, IVELIN PARK, PIL-YEON ZHU, HELEN H YAQOOB, FAISAL MARQUEZ, LINDA BERRY III, IVAN L LI, ZHAO |
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Snippet | Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be... |
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SubjectTerms | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
Title | Selective nitride etch |
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