Selective nitride etch

Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the pla...

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Main Authors ANGELOV, IVELIN, PARK, PIL-YEON, ZHU, HELEN H, LI, ZHAO, YAQOOB, FAISAL, BERRY III, IVAN L, MARQUEZ, LINDA, THEDJOISWORO, BAYU ATMAJA
Format Patent
LanguageChinese
English
Published 01.10.2016
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride.
Bibliography:Application Number: TW20150142384