Semiconductor device and method for manufacturing the same

The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor die, a semiconductor element and a solder layer. The semiconductor die includes a copper pillar. The semiconductor element includes a surface finish lay...

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Bibliographic Details
Main Authors YANG, PING-FENG, LIN, KWANG-LUNG, LEE, CHIU-WEN, HSIAO, YU-HSIANG
Format Patent
LanguageChinese
English
Published 16.09.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor die, a semiconductor element and a solder layer. The semiconductor die includes a copper pillar. The semiconductor element includes a surface finish layer, wherein the material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of at least two of copper, nickel and tin. The second IMC is a combination of gold and tin, a combination of palladium and tin, or both.
Bibliography:Application Number: TW20165105050