Atomic layer deposition of films using spatially separated injector chamber
Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases,...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
16.09.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases, second reactive gases, and purge gas in at least one of the processing regions to deposit a film. |
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Bibliography: | Application Number: TW20165100923 |