Semiconductor memory device

A semiconductor memory device includes a first memory cell, a first word line electrically connected to a gate of the first memory cell, a first bit line electrically connected to one end of the first memory cell, and a controller configured to execute a write operation, which includes a first cycle...

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Bibliographic Details
Main Author HOSONO, KOJI
Format Patent
LanguageChinese
English
Published 01.09.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor memory device includes a first memory cell, a first word line electrically connected to a gate of the first memory cell, a first bit line electrically connected to one end of the first memory cell, and a controller configured to execute a write operation, which includes a first cycle and a second cycle that is executed after the first cycle. The first cycle includes a first operation of applying a program voltage to the first word line, a second operation executed after the first operation of applying a first voltage to the first bit line and a second voltage lower than the first voltage to the first word line, and a third operation executed after the second operation of applying a verify voltage to the first word line. The second cycle includes the first operation and then the third operation, and excludes the second operation.
Bibliography:Application Number: TW20160104188