Etching method

• Main Authors: MATSUNAGA, JUNICHIRO, TAKAHASHI, NOBUHIRO, NISHIMURA, KAZUAKI, TAKEYA, KOJI
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONTROL OR REGULATING SYSTEMS IN GENERAL; CONTROLLING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS; PHYSICS; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; REGULATING; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In the present invention, an etching method includes the following: disposing a subject-to-processing substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises H2 gas and Ar gas in a state of excitation; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.