Silicon concentration or etch selectivity measurement method and measurement device

• Main Authors: OHNE, NAOKI, KARIYAMA, NAOMI, HIGASHI, NOBORU
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; MEASURING QUANTITY OF HEAT; MEASURING TEMPERATURE; PHYSICS; SEMICONDUCTOR DEVICES; TESTING; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR

Provided are a silicon concentration measurement method and measurement device capable of continuous inline measurement of a silicon concentration within an etching solution. Further, a sensor head for silicon concentration measurement is provided that is used in the measurement method and is not easily influenced by the fixation state of a crystal oscillator or the temperature difference between the sensor head and etching solution. Provided are an etch selectivity measurement method and measurement device capable of accurate, practical, continuous inline measurement of the etching speed ratio between a silicon nitride film and silicon oxide film. The silicon concentration measurement device is provided with a crystal oscillator 11 that is covered in a silicon oxide film and is made to come into contact with the etching solution 25 of a substrate processing device 26, a vibration frequency detection means 21 for vibrating the crystal oscillator 11 while detecting the vibration frequency of the same, and a ca