Manufacturing method for film and atomic layer deposition apparatus
A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by pl...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.07.2016
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Subjects | |
Online Access | Get full text |
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