Manufacturing method for film and atomic layer deposition apparatus

• Main Authors: LEE, KEUN-WOO, PARK, SUNG-HYUN, KIM, KYUNG-JOON, SHIN, INUL
• Format: Patent
• Language: Chinese; English
• Published: 16.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.