Landing structure for through-silicon via

• Main Authors: LEE, KEVIN J, LEATHERMAN, GERALD S, BRAIN, RUTH A, PELTO, CHRISTOPHER M
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the present disclosure describe techniques and configurations associated with forming a landing structure for a through-silicon via (TSV) using interconnect structures of interconnect layers. In eon embodiment, an apparatus includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a device layer disposed on the first surface of the semiconductor substrate, the device layer including one or more transistor devices, interconnect layers disposed on the device layer, the interconnect layers including a plurality of interconnect structures and one or more through-silicon vias disposed between the first surface and the second surface, wherein the plurality of interconnect structures include interconnect structures that are electrically coupled with the one or more TSVs and configured to provide one or more corresponding landing structures of the one or more TSVs. Other embodiments may be described and/or claimed.