Bonding wire for semiconductor device

Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu allo...

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Bibliographic Details
Main Authors UNO, TOMOHIRO, DEAI, HIROYUKI, OYAMADA, TETSUYA
Format Patent
LanguageChinese
English
Published 16.01.2016
Subjects
ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
SEMICONDUCTOR DEVICES
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Summary:Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2% by weight, and the thickness of the Pd coating layer is 0.015-0.150 [mu]m.
Bibliography:Application Number: TW20154112804