Semiconductor device and manufacturing method thereof

• Main Author: LIAO, WENIA
• Format: Patent
• Language: Chinese; English
• Published: 16.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate, an active layer, a source electrode, a drain electrode, a p-type doped layer, a gate electrode, a first passivation layer, and a field plate. The active layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the active layer. The p-type doped layer is disposed on the active layer and between the source electrode and the drain electrode. The p-type doped layer has a first thickness. The gate electrode is disposed on the p-type doped layer. The first passivation layer covers the gate electrode and the active layer. The field plate is disposed on the first passivation layer and is electrically connected to the source electrode. The field plate includes a field dispersion portion disposed between the gate electrode and the drain electrode. The first passivation layer between the field dispersion portion and the active layer has a second thickness smaller than the first thickness.