Manufacturing method of three-dimensional integrated circuit with aluminum nitride interposer layer

• Main Authors: WANG, CHIH, CHIANG, CHI-HAW, WANG, YU-PING, KUO, YANG-KUO
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed is a manufacturing method of three-dimensional integrated circuit with an aluminum nitride interposer layer, which includes the following steps: providing a first circuit component; providing a plurality of first conductive blocks arranged on the first circuit component; providing an aluminum nitride interposer layer arranged on the first circuit component, wherein the aluminum nitride interposer layer has a plurality of micro via holes each being filled with a conductor having an end in contact with a corresponding first conductive block; providing a plurality of second conductive blocks arranged on the aluminum nitride interposer layer and contacted the other ends of the conductors in the plurality of micro via holes; and providing at least a second circuit component disposed on the aluminum nitride interposer layer and electrically connected to the first circuit component through the first and second conductive blocks and the conductors. Thus, a three-dimensional integrated circuit with an alumin