Semiconductor device and method for forming the same

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a sec...

Full description

Saved in:
Bibliographic Details
Main Authors CHEN, KUANG-HSIN, LIN, CHUNG-WEI, CHIANG, TSUNG-YU, TIEN, BOR-ZEN
Format Patent
LanguageChinese
English
Published 16.10.2015
Subjects
Online AccessGet full text

Cover

Loading…
Abstract Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a second isolation structure and protruding through a top surface thereof. The top surface of the first isolation structure is higher than the top surface of the second isolation structure such that the second fin has a height higher than that of the first fin. The second isolation structure has a dopant concentration higher than that of the first isolation structure.
AbstractList Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a second isolation structure and protruding through a top surface thereof. The top surface of the first isolation structure is higher than the top surface of the second isolation structure such that the second fin has a height higher than that of the first fin. The second isolation structure has a dopant concentration higher than that of the first isolation structure.
Author CHIANG, TSUNG-YU
CHEN, KUANG-HSIN
LIN, CHUNG-WEI
TIEN, BOR-ZEN
Author_xml – fullname: CHEN, KUANG-HSIN
– fullname: LIN, CHUNG-WEI
– fullname: CHIANG, TSUNG-YU
– fullname: TIEN, BOR-ZEN
BookMark eNrjYmDJy89L5WQwCU7NzUzOz0spTS7JL1JISS3LTE5VSMxLUchNLcnIT1FIA4oCcW5mXrpCSUaqQnFibioPA2taYk5xKi-U5mZQdHMNcfbQTS3Ij08tLkhMTs1LLYkPCTcyMDQ1tjQ3MXM0JkYNACwNLpo
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID TW201539746A
GroupedDBID EVB
ID FETCH-epo_espacenet_TW201539746A3
IEDL.DBID EVB
IngestDate Fri Jul 19 16:16:15 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_TW201539746A3
Notes Application Number: TW20140144711
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151016&DB=EPODOC&CC=TW&NR=201539746A
ParticipantIDs epo_espacenet_TW201539746A
PublicationCentury 2000
PublicationDate 20151016
PublicationDateYYYYMMDD 2015-10-16
PublicationDate_xml – month: 10
  year: 2015
  text: 20151016
  day: 16
PublicationDecade 2010
PublicationYear 2015
RelatedCompanies TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
RelatedCompanies_xml – name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Score 3.1217391
Snippet Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device and method for forming the same
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151016&DB=EPODOC&locale=&CC=TW&NR=201539746A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1ZSwMxEB5qFfVNq6L1IILs2-IeMe4-LGL3oAg90NX2rWSblCp0t3RXBH-9k9haX_QhkAMmB5n5ZpLMBOAKbRub04k0M3nrm9QVrskdj5u2I-nEE5RbtvId7nRZ-5k-DG-GNXhb-cLoOKEfOjgictQY-b3S8nq-PsSK9NvK8jp7xariLkmDyFhax7baYcyIWkHc70W90AjDIB0Y3UfdhtBL2f0GbCo1WsXZj19ayitl_htSkj3Y6iO1vNqH2ue0ATvh6ue1Bmx3lhfemF3yXnkA9Em9Yy9yFaC1WBAhFY8Tngvy_Qs0QfVTpRmCEUG1jpR8Jg_hMonTsG1i96OfuY7SwXqk7hHU8yKXx0Bc5nNLeoxJ5lOJID9GzcLOuONTS2QiO4Hm33Sa_zWewq4qKHFsszOoV4t3eY44W2UXeoG-ABR8gds
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebTkXnVwTpW3FtY9Y-FHFtR9W1G1rd3kq6ZqiwdmwVwb_eS92cL_oQCDnIF7n73SW5O4ALtG00TsdCTUTLUqmRGirXTa5quqBjM6W8qUnf4SBk_hO9G14NK_C29IUp44R-lMERkaNGyO9FKa-nq0sst_xbOb9MXrEpv-5EtqssrGNNnjCmuG3b6_fcnqM4jh0NlPChpCH0UnazBustNAllnH3vuS29Uqa_IaWzDRt97C0rdqDy-VKHmrPMvFaHzWDx4I3VBe_Nd4E-yn_seSYDtOYzkgrJ44RnKfnOAk1Q_ZRlgmBEUK0jcz4Re3De8SLHV3H4-GetcTRYzdTYh2qWZ-IAiMEs3hQmY4JZVCDIj1Cz0BKuW7SZJmlyCI2_-2n8RzyDmh8F3bh7G94fwZYkSNGssWOoFrN3cYKYWySn5WZ9AU0qhMY
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+and+method+for+forming+the+same&rft.inventor=CHEN%2C+KUANG-HSIN&rft.inventor=LIN%2C+CHUNG-WEI&rft.inventor=CHIANG%2C+TSUNG-YU&rft.inventor=TIEN%2C+BOR-ZEN&rft.date=2015-10-16&rft.externalDBID=A&rft.externalDocID=TW201539746A