Semiconductor device and method for forming the same

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a sec...

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Bibliographic Details
Main Authors CHEN, KUANG-HSIN, LIN, CHUNG-WEI, CHIANG, TSUNG-YU, TIEN, BOR-ZEN
Format Patent
LanguageChinese
English
Published 16.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and protruding through a top surface thereof. The semiconductor device also includes a second fin partially surrounded by a second isolation structure and protruding through a top surface thereof. The top surface of the first isolation structure is higher than the top surface of the second isolation structure such that the second fin has a height higher than that of the first fin. The second isolation structure has a dopant concentration higher than that of the first isolation structure.
Bibliography:Application Number: TW20140144711