Memory cell and fabricating method thereof

A memory cell and a fabricating method thereof are provided. The memory cell includes a first conductive layer, a tunneling dielectric layer, a stepped oxide layer, and a first dielectric layer. The first conductive layer with stepped side walls is located on a substrate. The tunneling dielectric la...

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Bibliographic Details
Main Author MA, CHU-MING
Format Patent
LanguageChinese
English
Published 16.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A memory cell and a fabricating method thereof are provided. The memory cell includes a first conductive layer, a tunneling dielectric layer, a stepped oxide layer, and a first dielectric layer. The first conductive layer with stepped side walls is located on a substrate. The tunneling dielectric layer is located between the first conductive layer and the substrate. The stepped oxide layer covers the surface and the side walls of the first conductive layer. The first dielectric layer covers the ladder-shaped oxide layer.
Bibliography:Application Number: TW20143113347