Semiconductor device

A semiconductor device includes a first and second nitride semiconductor layer. The second nitride semiconductor layer has a band gap larger the first nitride semiconductor layer. Source and drain electrodes are formed spaced from each other on the second nitride semiconductor layer. A third nitride...

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Bibliographic Details
Main Author FUJIMOTO, HIDETOSHI
Format Patent
LanguageChinese
English
Published 16.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first and second nitride semiconductor layer. The second nitride semiconductor layer has a band gap larger the first nitride semiconductor layer. Source and drain electrodes are formed spaced from each other on the second nitride semiconductor layer. A third nitride semiconductor layer is formed on the second nitride semiconductor layer between the source and drain electrodes. A gate electrode is formed on the third nitride semiconductor layer. The third nitride semiconductor layer comprises at least two first layers and at least one a second layer which has a lower p-type dopant concentration than the first layer. The second layer also has a band gap larger than the first layer. The lowermost layer and the uppermost layer in the third nitride semiconductor layer stack are the first layers.
Bibliography:Application Number: TW20140118878