I-III group precursor thin film manufacturing method of I-III-VI group compounds

• Main Authors: LIN, WEI-TING, LU, YUNG-TIEN, HU, SUNGNG, PENG, WAN-HSUAN, CHAN, SHIH-HAO
• Format: Patent
• Language: Chinese; English
• Published: 16.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The present invention relates to a precursor characteristic control method of a solar cell. The precursor thin film comprises copper, indium, and gallium elements or at least copper element and indium element of the I-III group. The precursor characteristic control method provided by this invention comprises: first depositing a Cu-In-Ga metal element thin film of the I-III group on a substrate; then in a vacuum environment, using inert gas ion source to bombard a Cu-In-Ga precursor thin film to control the crystallization pattern, ratio and uniformity of the Cu-In-Ga precursor thin film; finally performing annealing treatment or selenylation to obtain a CIGS absorption layer thin film, thereby controlling the crystallization pattern, ratio, surface profile and uniformity of the CIGS thin film of the I-III-VI group compounds in the application to fabrication of I-III-VI group solar cells.