Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achi...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.07.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps. |
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Bibliography: | Application Number: TW20143133765 |