Reflective photomask and production method therefor

• Main Authors: FUKUGAMI, NORIHITO, IMOTO, TOMOHIRO, WATANABE, GENTA
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2015
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A reflective photomask (10) comprising: a substrate (11); a multilayer reflective film (12) that is formed upon the substrate (11) and reflects exposure light for lithography, an absorption film (14) that is formed upon the multilayer reflective film (12), absorbs the exposure light, and has a circuit pattern (15) or a circuit pattern-forming area formed therein; a light-blocking area (B) that is formed by the removal of some of the multilayer reflective film (12) and some of the absorption film (14) from the substrate (11) on the outer peripheral side of the circuit pattern (15) or the circuit pattern-forming area, and blocks some of the exposure light reflected by the multilayer reflective film (12); and a plurality of protruding sections (1) that is formed at the surface (11b) of the substrate exposed in the light-blocking area (B), and suppresses the reflection of out-of-band light that is included in the exposure light, has a wavelength of 800 nm or less, and is incident to the light-blocking area (B).