Method for capping copper interconnect lines

A method of forming a capping layer over copper containing contacts in a dielectric layer with a liner comprising a noble metal liner around the copper containing contacts is provided. An electroless deposition is provided to deposit a deposition comprising copper on the noble metal liner and the co...

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Bibliographic Details
Main Authors KOLICS, ARTUR, DICTUSIES
Format Patent
LanguageChinese
English
Published 16.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a capping layer over copper containing contacts in a dielectric layer with a liner comprising a noble metal liner around the copper containing contacts is provided. An electroless deposition is provided to deposit a deposition comprising copper on the noble metal liner and the copper containing contacts. A capping layer is formed over the deposition comprising copper.
Bibliography:Application Number: TW20143125872