Method for capping copper interconnect lines
A method of forming a capping layer over copper containing contacts in a dielectric layer with a liner comprising a noble metal liner around the copper containing contacts is provided. An electroless deposition is provided to deposit a deposition comprising copper on the noble metal liner and the co...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
16.04.2015
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method of forming a capping layer over copper containing contacts in a dielectric layer with a liner comprising a noble metal liner around the copper containing contacts is provided. An electroless deposition is provided to deposit a deposition comprising copper on the noble metal liner and the copper containing contacts. A capping layer is formed over the deposition comprising copper. |
---|---|
Bibliography: | Application Number: TW20143125872 |