High electron mobility transistor

A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting t...

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Main Authors QIU, XIAN-QIN, YANG, CHIH-WEI, LIN, HENG-KUANG, TUNG, CHIEN-KAI, WANG, HSIANGUN
Format Patent
LanguageChinese
English
Published 01.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.
Bibliography:Application Number: TW20143127874