Method for forming metal silicide layers

• Main Authors: EMERAUD, THIERRY, LERAT, JEAN-FRANCOIS
• Format: Patent
• Language: Chinese; English
• Published: 16.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The present invention is directed to a method for forming a metal silicide layer for a photovoltaic cell contact, the method comprising: - a step of depositing a first metal layer on a silicon substrate surface, - a step of performing a laser annealing step thereby forming metal silicide characterized in that said steps are part of an in-line continuous process. In addition, the present invention is directed to an apparatus for forming a metal silicide layer for a photovoltaic cell contact, the apparatus comprising: - a first deposition station for providing a first metal layer on a silicon substrate surface, - a laser annealing station for annealing thereby forming metal silicide - a substrate transport means characterized in that at least the first deposition station, the laser annealing station and the substrate transport means are adapted to integrated in-line continuous processing.